Beamline 11.3.2: EUV Mask Inspection

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In Photolithography, masks carry the pattern that is transferred onto a wafer.

Any printable defect can spoil the die.

Extreme Ultraviolet (EUV) lithography relies on multilayer-coated mirrors and 13-nm-wavelength light. An EUV mask, or reticle, is made from a nearly perfect mirror coated with a patterned absorber layer. A mask is a highly complex optical system made from more than five different materials. The structure and material properties give the mask a wavelength-specific response and make testing with EUV light essential during development.

We have created a world-leading high-resolution EUV microscope capable of measuring the reflective properties of a mask on a 100-nm length scale, or smaller. Working in close collaboration with semiconductor industry sponsors, the project's goals include:

1. Understand and quantify EUV defects and repair strategies
2. Qualify other inspection tools becoming available world-wide
3. Validate and improve modeling
4. Evaluate the performance of actinic inspection

For more information, please visit the mask inspection site.